- Le CNRS
- Se connecter
- Menu langue format menu déroulant <-->
<-->
Menu langue format drapeaux <-->
Accueil du site > Publications > 2006
2006
Articles de journaux
Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides
A. Sirenko, A. Kazamirov, A. Ougazzaden, S. M. O’Malley, D. H. Bilderback, Z. H. Cai, B. Lai, R. Huang, V. Gupta, M. Chien, and S. N. G. Chu
Applied Physics Letters, vol. 88, issue 8, February 2006.
MOVPE growth study of BxGa(1-x)N on GaN template substrate
S. Gautier, C. Sartel, S. Ould Saad, N. Maloufi, J. Martin, F. Jomard, and A. Ougazzaden
Journal of Superlattices and (...)
Communications
GaN materials growth by MOVPE in a new design of reactor using DMHy and NH3
S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko and A. Ougazzaden
Proc. IC MOVPE Conference, 2006, pp.369.
BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
A. Ougazzaden, S. Gautier, C. Sartel, N. Maloufi, J. Martin, and F. Jomard
presented at the IC MOVPE 2006, Miyazaki, Japan, June, 2006.
MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate
S. Gautier, C. Sartel, S. Ould (...)

