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New materials and nano-heterostructures for photonics and electronics
Coordinator: A. Ougazzaden
Laboratories involved within the UMI : GT Lorraine, LMOPS, GT Atlanta, SUPELEC
Collaborators :
- Main laboratories : LETAM (UPVM), IEMN (CNRS), LPN (CNRS), LPM (UHP), LPMIA (UHP), LGEP (SUPELEC/Paris 6), CNRS Meudon, NJIT (USA), Cornell (USA), NorthWestern (USA), KTH (Sweden)
- Companies : Nanovation, Thalès, France Telecom, Novasic, TDI, Siltronics, Alcatel/Lucent
The project is divided into four parts:
1. New Semiconductor Materials BAlGaN
- Epitaxial growth of BAlGaN on SiC and AlN substrates
- Study of electrical, optical and structural properties
- Heterostructure growth for UV sources
- Applications: compact UV sources, UV detectors, SAW, HEMT
2. Nano-heterostructures
- Nano-heterostructure growth and characterization of GaN based materials using selective area growth
- Applications: optical integration based on heterogeneous materials(resonator cavities, waveguides, filters, photonic crystals, ...)
- Optical Integration through the manipulation of the size, shape, type, and period of the nanostructures
- Modeling and simulation of novel functionality
- Evaluation of the optical & electrical characteristics
3. Growth on unconventional substrates
- GaN growth on ZnO
- GaN growth on LiNbO3
- Applications: LED, waveguide ...
4. Solar cells
- Research the MOVPE growth and properties of InGaN
- Design and simulate InGaN based solar cells
- Fabricate and test epitaxially grown, multi junction, InGaN solar cells on low cost substrates
